Multilayer Ceramic Package Capabilities

Electronic Products, Inc. (EPI) is a powder to package, fully integrated HTCC technical ceramics and glass-to-metal package manufacturer. The following information details our ceramic packaging capabilities and offers design guidelines. View our facility page to learn more about our vertically integrated process capabilities.

We specialize in multiple ceramics including:

We can accept a simple print and most software formats for your prototype design. We are using Solidworks, DraftSight, Sonnet EM, ANSYS DesignSpace and CST Microwave Studio.

Below is a general overview of our multilayer ceramic process using an example design. Each device is manufactured using it's own process with our extensive in-house equipment capabilities for maximum efficiency. For more information on our vertically integrated process capabilities click here.

Multilayer Ceramic Process Capabilities

Overall Dimensions:

	Standard	Custom
1. Max Size (A x B):	2 x 2 [50.8 x 50.8]	3 x 3 [76.2 x 76.2]
2. Tolerance (As fired) Overall (A & B): Thickness (C & D): Thickness (C & D):	±1%, NLT ±.005 [0.127] ±10%, NLT ±.002 [0.051] 0.004/inch [.102/mm]	±0.5%, NLT ±.003 [0.076] ±7%, NLT ±.002^* [0.051] 0.003/inch [.76/mm]
3. Number of Layers (C): Tape Layer Overall Thickness	2 0.010 to 0.060 [0.250 to 1.50] Typ.	10 Up to 0.150 [4.00]
4. Cavity Depth	0.040 [1.00] Typ.	Upto 0.120 [3.00]

NTL -Not Less Than Ceramic Process Capabilities

Via & Conductor Dimensions (Tape Layers):

	Standard °	Custom
A. Via Hole Diameter:	.010 [0.254]	.006 [0.152]
B. Via Cover Dot Diameter:	.020 [0.508]	.012 [0.305]
C. Via Center Spacing:	3 x Θ	3 x Θ
D. Via Center Spacing:	3 x Θ	3 x Θ
E. Via Center Spacing:	3 x Θ	3 x Θ
F. Via Cover Dot to Line Clearance:	.012 [0.305]	.008 [0.203]
G. Line Width:	.010 [0.254]	.005 [0.127]
H. Line to Line Clearance:	.010 [0.254]	.006 [0.152]
I. Line Center Spacing;	.020 [0.508]	.008 [0.203]
J. Cavity to Via Center:	3 x Θ	2.5 x Θ
K. Outside Edge to Via Center:	4 x Θ	3 x Θ
L. Line to Outside Edge:	.020 [0.508]	.015 [0.381]

° = Greater Dimension Available Ceramic Process Capabilities

Coated Via Hole Dimensions (Tape Layer):

	Standard °	Custom
A. Closed Hole Diameter:	.020 [0.508]	.015 [0.381]
B. Via Cover Dot Diameter:	.020 [0.508]	.014 [0.356]
C. Open Hole Diameter:	.020 [0.508]	.015 [0.381]
D. Via Cover Dot Diameter:	.020 [0.508]	.014 [0.356]
E. Opening Diameter:	.020 [0.508]	.015 [0.381]
F. Castellation (Chip Carrier):	Θ.020 [0.254]	Θ.015 [0.381]
G. Castellation (Chip Carrier):	Θ.020 [0.254]	Θ.015 [0.381]
H. Solid Via Diameter:	Θ.006 - 0.15 [0.152 - 0.381] Typ.

° = Greater Dimension Available

Material Properties and Plated Metallizations

Alumina and Aluminum Nitride Properties

	92% Alumina (Al2O3)	94% Alumina (Al2O3)	99.8% Alumina (Al2O3)	Zirconia Toughened Alumina (ZTA)	Aluminum Nitride(AlN)
Color:	Black	White	White	White	Gray
Crystal Size (µm):	8	8	8	6	5
Water Absorption (%):	0	0	0	0	0
Density (g/cc):	3.67	3.67	3.91	4.3	3.3
Hardness (V):	12	13	15	14.5	11.5
Fracture Toughness (MPam^0.5):	3~4	4~5	3~4	6	3
Flexural Strength (MPa):	630	430	450	640	290
Modulus (GPa):	320	320	380	338	330
Compressive Strength (MPa):	1800	2200	2300	2800	2100
CTE (x10^-6/°C):	7	7	6.5	6	4.5
Thermal Conductivity @25°C (W/mK):	20	25	30	25	180
Specific Heat (J/gK):	0.79	0.78	0.79	-	0.72
Dielectric Strength (KV/mm):	12	16	16	14	16
Dielectric Constant (@ 1MHz):	10	9.5	10	12.4	8.5
Dielectric Constant (@ 1GHz):	10	9.5	9.6	9.5	8.4
Dielectric Loss (@ 1MHz):	0.0013	0.003	0.001	0.005	0.005
Volume Resistivity:	>10^14	10^14	10^14	10^14	10^14

Tungsten Properties:

	Tungsten
Bulk Modulus (GPa):	310
Shear Modulus (GPa):	161
Melting Point:	3410°C ±30ºC
Boiling Point:	5500ºC
CTE (x10^-6/°C):	4.5
Adhesion:	4.3K g/mm^2 (6,000 psi)
Solder Leach:	10 Cycles - No Degradation of Nickel Over Tungsten (30 Seconds Dipping Per Cycle in 60/40 @ 230°C)
Thermal Conductivity @25°C (W/mK):	150-160
Electrical Resistivity:	5.5 x 10-8OΩ per cm
External Sheet Resistivity (plated):	5mΩ/square
Internal Sheet Resistivity:	10mΩ-12mΩ/square

Tungsten

Bulk Modulus (GPa):

310

Shear Modulus (GPa):

161

Melting Point:

3410°C ±30ºC

Boiling Point:

5500ºC

CTE (x10^-6/°C):

4.5

Adhesion:

4.3K g/mm^2 (6,000 psi)

Solder Leach:

10 Cycles - No Degradation of Nickel Over Tungsten (30 Seconds Dipping Per Cycle in 60/40 @ 230°C)

Thermal Conductivity @25°C (W/mK):

150-160

Electrical Resistivity:

5.5 x 10-8OΩ per cm

External Sheet Resistivity (plated):

5mΩ/square

Internal Sheet Resistivity:

10mΩ-12mΩ/square

Plating Capabilities:

Electrolytic Gold, Nickel, and Silver. These are offered with ASTM or MIL specs, however, exact specifications are usually driven by the customer.